In 1959, Hammarlund began to develop the first integrated circuits, combining the bipolar transistors and MOSFETs with the USIC's research on integrated circuits. The MOS transistor structure was then patented by IBM in 1960, and a complete monolithic integrated circuit was demonstrated in 1961. The performance of the MOS transistor was very similar to that of the silicon bipolar transistor, but unlike the MOS transistor, the bipolar transistor had a single crystal silicon wafer substrate.
The MOS transistor with a thickness of 100 micrometers had a drain-source current of about 1 mA at room temperature. Tomas Impedich-Rijksdenk and his team who made the first devices. This single crystal silicon wafer-based transistor was named the IMPATT after Dr. The first silicon transistor was made by the IBM Metal Oxide Semiconductor Laboratory (MOS Laboratory) in December 1959, at the IBM Research Laboratory in Yorktown Heights, New York. All Type Transistor Equivalent Pdf Free _HOT_
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